Vishay Semiconductors IR Emitters & Silicon PIN Photodiode
Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.
Features
- Photodiode
- High radiant sensitivity from 1mW/sr to 1800mW/sr
- Daylight blocking filter matched with 830nm to 950nm IR Emitters
- Reverse light current of 3μA
- 1nA low dark current
- 920nm wavelength of peak sensitivity
- Low 0.1%/K temperature coefficient of light current
- Compact package measures 3mm x 2mm with a height of only 1mm
- Ultra-wide ±75º angle of half-intensity
- Floor life of 168 hours and moisture sensitivity level (MSL) of 3 following J-STD-020
- Support lead (Pb)-free reflow soldering
- Conform to Vishay's "green" standards
- IR Emitters
- Peak wavelengths of 830nm and 950nm
- Clear, untinted plastic packages
- High radiant sensitivity from 1mW/sr to 1800mW/sr
- Fast switching times of 15ns
- GaAIAs multi-quantum well (MQW) and double hetero (DH) technology
- Low forward voltage down to 1.3V typical
Applications
- IR touch panels for devices
- Printer displays
- eBook readers
- Smartphones
- Tablets
- Ultrabooks
- GPS units
- High power emitters for limited spaces
- High performance transmissive or reflective sensors
Infographic - PhotodIodes
Infographic - Optical Sensors
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