STMicroelectronics MDmesh DM6 N-channel Power MOSFETs
STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Qrr) and recovery time (trr), combined with low RDS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Features
- Improved intrinsic diode reverse recovery time (Trr) for increased efficiency
- Higher dV/dt capability for improved system reliability
- Fast-recovery body diode
- Lower RDS(on) per area vs the previous generation
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protected
- AEC-Q101 qualified
Applications
- High-efficiency converters
- Bridge topologies
- ZVS phase-shift converters
- Switching
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Electrical Characteristics
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