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STMicroelectronics STD12N60DM2AG N-channel Power MOSFET

STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is a part of the MDmesh™ DM2 fast-recovery diodes. This automotive-grade N-channel power MOSFET offers very low recovery charge (Qrr) and recovery time (trr) combined with low RDS(on). This power MOSFET features low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is suitable for demanding high-efficiency converters and for bridge topologies and ZVS phase-shift converters.

Features

  • Fast recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • Extremely high dv/dt ruggedness
  • Zener protected
  • 100% avalanche tested
  • AEC-Q101 qualified

Applications

  • Converters
  • Bridge topologies
  • ZVS phase-shift converters
  • Switching

Electrical Characteristic

STMicroelectronics STD12N60DM2AG N-channel Power MOSFET

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Published: 2018-07-23 | Updated: 2023-02-13