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onsemi NVNJWS200N031L Single N-Channel Power MOSFET

onsemi NVNJWS200N031L Single N-Channel Power MOSFET has a drain-to-source breakdown voltage (V(BR)DSS) of 30V (minimum) and a continuous drain current (ID) rating of 3.3A. The MOSFET features a low RDS(on) of 200mΩ (maximum) (VGS = 4.5V, ID = 1.5A) to minimize conduction losses. It also features a low input capacitance (CISS) of 89pF. The device comes in a wettable flank with an ESD-protected gate. The onsemi NVNJWS200N031L is AEC-Q101 qualified and PAP capable.

Features

  • Low RDS(on) and low gate threshold
  • Low input capacitance
  • ESD-protected gate
  • Wettable flank for enhanced optical inspection
  • AEC-Q101 qualified and PPAP capable
  • Lead-free

Applications

  • Low side load switches
  • DC-DC converters (buck and boost circuits)

Specifications

  • 30V drain-to-source voltage (VDSS)
  • ±8V gate-to-source voltage (VGS)
  • 2.2A (at +25°C) continuous drain current (ID), 1.5A at +100°C
  • 1.8W (at +25°C) power dissipation (PD), 0.9W at +100°C
  • 25A pulsed drain current (IDM) (tp = 10µs)
  • -55°C to +175°C operating junction/storage temperature (TJ, Tstg) range
  • +260°C lead temperature for soldering purposes (TL)
  • Typical drain-to-source on resistance [RDS(on)]
    • 153mΩ (typical) at VGS = 4.5V, ID = 1.5A
    • 185mΩ (typical) at VGS = 3V, ID = 0.5A

Circuit Diagram

Schematic - onsemi NVNJWS200N031L Single N-Channel Power MOSFET
Published: 2025-10-01 | Updated: 2025-10-14