NVNJWS200N031LTAG

Name: onsemi NVNJWS200N031LTAG
Brand: onsemi
SKU: 863-VNJWS200N031LTAG
Price: 0.31 GBP
Availability: OutOfStock

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Mouser No:

863-VNJWS200N031LTAG

Mfr. No:

NVNJWS200N031LTAG

Mfr.:

onsemi

Description:

MOSFETs Mosfet - Power, N-Channel with ESD Protection, 30 V, 3.3 A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVNJWS200N031LTAG Datasheet (PDF)

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On Order:: 2,672
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.315	£0.32
	£0.223	£2.23
	£0.172	£17.20
	£0.152	£76.00
	£0.145	£145.00
Full Reel (Order in multiples of 3000)
	£0.145	£435.00
	£0.139	£834.00
	£0.131	£1,179.00
	£0.124	£2,976.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	2.2 A
Rds On - Drain-Source Resistance:	200 mOhms
Vgs - Gate-Source Voltage:	8 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	1.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.8 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	2.2 ns
Product Type:	MOSFETs
Rise Time:	2.6 ns
Series:	NVNJWS200N031L
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10.2 ns
Typical Turn-On Delay Time:	5.2 ns

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Datasheet

NVNJWS200N031LTAG Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NVNJWS200N031L Single N-Channel Power MOSFET

onsemi NVNJWS200N031L Single N-Channel Power MOSFET has a drain-to-source breakdown voltage (V_(BR)DSS) of 30V (minimum) and a continuous drain current (I_D) rating of 3.3A. The MOSFET features a low R_DS(on) of 200mΩ (maximum) (V_GS = 4.5V, I_D = 1.5A) to minimize conduction losses. It also features a low input capacitance (C_ISS) of 89pF. The device comes in a wettable flank with an ESD-protected gate. The onsemi NVNJWS200N031L is AEC-Q101 qualified and PAP capable.

NVNJWS200N031LTAG

Mfr.: onsemi

Description: MOSFETs Mosfet - Power, N-Channel with ESD Protection, 30 V, 3.3 A

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Pricing (GBP)

Specifications

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Datasheet

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NVNJWS200N031L Single N-Channel Power MOSFET

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Mfr.:

onsemi

Description:

MOSFETs Mosfet - Power, N-Channel with ESD Protection, 30 V, 3.3 A

FEATURED PRODUCTS

ONSEMI