Infineon Technologies CoolGaN™ Integrated Power Stages (IPS)
Infineon Technologies CoolGaN™ Integrated Power Stages (IPS) combine a half-bridge power stage with two enhancement mode CoolGaN HEMTs, including dedicated gate drivers in a small 8mm x 8mm QFN-28 package. The devices include the IGI60F1414A1L, IGI60F2020A1L, IGI60F2727A1L, and IGI60F5050A1L with two 140mΩ, 200mΩ, 270mΩ, and 500mΩ GaN switches, respectively.
The Infineon CoolGaN IPSs utilize the low-to-medium power area to support the design of high-density AC/DC chargers and adapters, implementing the superior switching behavior of CoolGaN HEMTs. The CoolGaN and Infineon's other related power switches enable a very robust gate structure. When driven by a continuous gate current of a few mA in the "on" state, a minimum on-resistance Rdson is continually guaranteed.
Features
- Two GaN switches in a half-bridge configuration with dedicated high- and low-side isolated gate drivers
- Source/sink driving current up to 1A/2A
- Application-configurable turn-on and turn-off speed
- Fast input-to-output propagation (typ. 47ns) with extremely small channel-to-channel mismatch
- PWM input signal (switching frequency up to 3MHz)
- Standard logic input levels compatible with digital controllers
- Single gate driver supply voltage possible (typ. 8V) with fast UVLO recovery
- Wide supply range
- Low-side open source for current sensing with an external shunt resistor
- Galvanic input-to-output isolation based on robust coreless transformer technology
- Gate driver with very high common mode transient immunity (CMTI) of >300V/ns
- Thermally enhanced 8mm x 8mm QFN-28 package
- Fully qualified acc. to JEDEC for industrial applications
Applications
- Chargers and adaptors
- Server, telecom, and networking SMPS
- Low-power motor drives
- LED lighting
Power Topologies
• Active clamp flyback or hybrid flyback converters
• LLC or LCC resonant converters
• Single or interleaved synchronous buck or boost converters
• Single-phase or multiphase two-level inverters
Specifications Chart
Associated Products
Infineon Technologies CoolGaN™ 600V GIT HEMTs
GaN enhancement-mode transistors with fast turn-on/turn-off speeds at minimum switching losses.
Infineon Technologies CoolGan™ 600V e-Mode Power Transistors
Enables simpler half-bridge topologies with fast turn-on and turn-off speeds.
Infineon Technologies CoolGaN™ Gallium Nitride HEMTs
Offer excellent advantages, including efficiency, reliability, power density and quality.
Typical Application
