IGOT65R055D2AUMA1

Infineon Technologies
726-IGOT65R055D2AUMA
IGOT65R055D2AUMA1

Mfr.:

Description:
GaN FETs HV GAN DISCRETES

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Infineon Technologies IGOT65R055D2AUMA1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: GaN FETs
RoHS:  
SMD/SMT
HEMT
1 Channel
650 V
66 mOhms
- 10 V
1.6 V
6.6 nC
- 55 C
+ 150 C
83 W
Enhancement
GaN
Brand: Infineon Technologies
Configuration: Single
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product: Power Transistors
Product Type: GaN FETs
Factory Pack Quantity: 800
Subcategory: Transistors
Transistor Type: 1 N-Channel
Type: GaN Power Transistor
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Indonesia
Assembly Country of Origin:
Indonesia
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

CoolGan™ 600V e-Mode Power Transistors

Infineon Technologies CoolGan™ 600V Enhancement Mode (e-Mode) Power Transistors enable simpler half-bridge topologies with fast turn-on and turn-off speeds. The rugged and reliable transistors are available in high-performing SMD packages to fully exploit the benefits of GaN. The transistors feature high efficiency, high power density, higher operating frequency capability, and reduced EMI. Applications include telecom / datacom / server SMPS, wireless charging, chargers, and adapters.

In Stock: 613

Stock:
613 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£5.53 £5.53
£2.97 £29.70
£2.72 £272.00
£2.19 £1,095.00
Full Reel (Order in multiples of 800)
£2.19 £1,752.00

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.