Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs
Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.
Features
- CoolSiC MOSFET G2
- Low RDS(on)
- Large product portfolio
- Robustness options
Applications
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- EV charging infrastructure
- Motor drives
- String inverters
- General purpose drives (GPD)
- Online UPS/industrial UPS
Videos
Infographic
Additional Resources
- Online Media Briefing CoolSiC G2
- Application Note: CoolSiC MOSFET 650V G2
- Efficiency in Drives
- Infineon EiceDRIVER™ Gate Driver ICs - Selection Guide
- High-Voltage Switches 500V - 950V
- Realizing the Future of Fast EV Charging Through CoolSiC-Based Topology Design
- CoolSiC Solution for Servo Drives
- Silicon Carbide CoolSiC Schottky Diodes
- Enabling Compact, Efficient Designs with High Voltage CoolSiC™ Discretes E-Book
