Infineon Technologies CoolGaN™ 600V GIT HEMTs
Infineon Technologies CoolGaN™ 600V Gate Injection Technology (GIT) High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses. These GaN enhancement-mode power transistors are available in a ThinPAK 5x6 surface-mount package, ideal for applications that require a compact device without a heatsink. The small 5mm x 6mm2 footprint and low 1mm profile height makes the Infineon Technologies CoolGaN™ 600V GIT HEMTs perfect for achieving high power density.
Features
- Enhancement mode transistor, normally OFF switch
- GaN HEMT in small form factor leadless SMD package
- GaN-tailored qualification
- Ultra-fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Improves system efficiency
- Improves power density
- Enables higher operating frequencies
- System cost reduction savings
- Reduces EMI
- Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
- Lead-free, Halogen-free, and RoHS compliant
Applications
- SMPS for Industrial, telecom, and data centers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high-frequency LLC)
- Low power SMPS
- Chargers and adaptors
Specifications
- 600V maximum continuous drain-source voltage
- 800V minimum drain-source destructive breakdown voltage
- Pulsed drain-source voltage
- 750V maximum at +25°C
- 650V maximum at +125°C
- 750V maximum pulsed switching surge voltage
- 8.2A to 12.8A maximum drain-source continuous current range
- 12.2A to 23A maximum drain-source pulsed current range
- 5.9A to 11A maximum drain-source pulsed current range
- 4mA to 7.7mA maximum continuous gate current range
- 406mA to 770mA maximum pulsed gate current range
- -10V minimum continuous gate-source voltage
- -25V minimum pulsed gate-source voltage
- 41.6W to 55.5W maximum power dissipation range
- 200V/ns maximum drain-source voltage slew rate
- -40°C to +150°C operating temperature range
Related HEMTs
Infineon Technologies CoolGaN™ Gallium Nitride HEMTs
Offer excellent advantages, including efficiency, reliability, power density and quality.
Infineon Technologies CoolGaN™ Integrated Power Stages (IPS)
Combines a half-bridge power stage with 2 enhancement mode CoolGaN HEMTs, in a small QFN-28 package.
Published: 2023-02-13
| Updated: 2023-09-08