|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
£15.07
-
252In Stock
-
600Expected 16/11/2026
-
New Product
|
Mouser Part No
511-SCT019HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
252In Stock
600Expected 16/11/2026
|
|
|
£15.07
|
|
|
£12.40
|
|
|
£10.72
|
|
|
£10.72
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
£8.50
-
969In Stock
|
Mouser Part No
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
969In Stock
|
|
|
£8.50
|
|
|
£5.89
|
|
|
£4.98
|
|
|
£4.23
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
£20.78
-
714In Stock
|
Mouser Part No
511-SCTW70N120G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
£12.03
-
2,329In Stock
|
Mouser Part No
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,329In Stock
|
|
|
£12.03
|
|
|
£8.50
|
|
|
£7.81
|
|
|
£7.80
|
|
|
£6.64
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
£16.96
-
47In Stock
-
600Expected 20/04/2026
|
Mouser Part No
511-SCTW90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
47In Stock
600Expected 20/04/2026
|
|
|
£16.96
|
|
|
£15.18
|
|
|
£13.62
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
£17.51
-
922In Stock
-
New Product
|
Mouser Part No
511-SCT016H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
922In Stock
|
|
|
£17.51
|
|
|
£12.66
|
|
|
£12.65
|
|
|
£12.63
|
|
|
£10.74
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
£18.78
-
274In Stock
-
600Expected 09/03/2026
-
New Product
|
Mouser Part No
511-SCT011HU75G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
274In Stock
600Expected 09/03/2026
|
|
|
£18.78
|
|
|
£13.80
|
|
|
£13.79
|
|
|
£11.72
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
£15.58
-
640In Stock
-
New Product
|
Mouser Part No
511-SCT012W90G3-4AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640In Stock
|
|
|
£15.58
|
|
|
£13.28
|
|
|
£11.49
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
£15.40
-
739In Stock
-
New Product
|
Mouser Part No
511-SCT020HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
739In Stock
|
|
|
£15.40
|
|
|
£12.75
|
|
|
£11.03
|
|
|
£10.23
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
£14.34
-
513In Stock
-
New Product
|
Mouser Part No
511-SCT020W120G3-4AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513In Stock
|
|
|
£14.34
|
|
|
£11.83
|
|
|
£11.73
|
|
|
£11.53
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
£13.55
-
502In Stock
-
New Product
|
Mouser Part No
511-SCT025W120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502In Stock
|
|
|
£13.55
|
|
|
£10.85
|
|
|
£9.38
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
£9.47
-
1,082In Stock
-
New Product
|
Mouser Part No
511-SCT027H65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,082In Stock
|
|
|
£9.47
|
|
|
£6.67
|
|
|
£5.80
|
|
|
£4.92
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
£10.14
-
1,011In Stock
-
600Expected 14/12/2026
-
New Product
|
Mouser Part No
511-SCT040HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,011In Stock
600Expected 14/12/2026
|
|
|
£10.14
|
|
|
£7.11
|
|
|
£6.26
|
|
|
£6.14
|
|
|
£5.33
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
£8.14
-
547In Stock
-
New Product
|
Mouser Part No
511-SCT040W65G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
547In Stock
|
|
|
£8.14
|
|
|
£4.86
|
|
|
£4.63
|
|
|
£4.01
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
£9.40
-
641In Stock
-
New Product
|
Mouser Part No
511-SCT040W65G3-4AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
641In Stock
|
|
|
£9.40
|
|
|
£7.65
|
|
|
£6.37
|
|
|
£5.68
|
|
|
£4.84
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
£6.38
-
1,779In Stock
-
New Product
|
Mouser Part No
511-SCT055TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,779In Stock
|
|
|
£6.38
|
|
|
£4.64
|
|
|
£3.88
|
|
|
£3.45
|
|
|
£3.07
|
|
|
£3.06
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
£12.89
-
14In Stock
-
2,000Expected 12/10/2026
-
New Product
|
Mouser Part No
511-SCT025H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
14In Stock
2,000Expected 12/10/2026
|
|
|
£12.89
|
|
|
£9.14
|
|
|
£8.54
|
|
|
£7.25
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
£7.21
-
37In Stock
-
New Product
|
Mouser Part No
511-SCT040TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37In Stock
|
|
|
£7.21
|
|
|
£5.07
|
|
|
£4.02
|
|
|
£3.41
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
£15.43
-
160In Stock
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
160In Stock
|
|
|
£15.43
|
|
|
£11.08
|
|
|
£10.76
|
|
|
£9.15
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
£11.62
-
202In Stock
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
202In Stock
|
|
|
£11.62
|
|
|
£8.21
|
|
|
£7.48
|
|
|
£6.35
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
£11.93
-
532In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532In Stock
|
|
|
£11.93
|
|
|
£9.24
|
|
|
£8.93
|
|
|
£8.70
|
|
|
View
|
|
|
£7.98
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
£9.69
-
353In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
353In Stock
|
|
|
£9.69
|
|
|
£7.25
|
|
|
£6.26
|
|
|
£5.04
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
£9.77
-
698In Stock
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
698In Stock
|
|
|
£9.77
|
|
|
£6.90
|
|
|
£5.23
|
|
|
£5.14
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
£9.79
-
629In Stock
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
629In Stock
|
|
|
£9.79
|
|
|
£6.84
|
|
|
£5.18
|
|
|
£5.08
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
£9.44
-
473In Stock
-
1,200Expected 20/04/2026
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
473In Stock
1,200Expected 20/04/2026
|
|
|
£9.44
|
|
|
£6.63
|
|
|
£6.00
|
|
|
£5.66
|
|
|
£4.88
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|