NSVT5551MR6T1G

onsemi
863-NSVT5551MR6T1G
NSVT5551MR6T1G

Mfr.:

Description:
Bipolar Transistors - BJT NPN GENERAL-PURPOSE AMPLIFIER

Lifecycle:
New Product:
New from this manufacturer.
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More Information
Learn more about onsemi NSVT5551MR6T1G

In Stock: 2,441

Stock:
2,441 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£0.705 £0.71
£0.436 £4.36
£0.298 £29.80
£0.234 £117.00
£0.201 £201.00
Full Reel (Order in multiples of 3000)
£0.164 £492.00
£0.151 £906.00
£0.14 £1,260.00
£0.136 £3,264.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
TSOT-23-6
NPN
Dual
160 V
180 V
6 V
700 mW
300 MHz
+ 150 C
NSVT5551M
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 600 mA
DC Collector/Base Gain hFE Min: 80 at 1 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

USHTS:
8541210075
TARIC:
8541210000
ECCN:
EAR99

NSVT5551M Bipolar Transistor

onsemi NSVT5551M Bipolar Transistor is an AEC-Q101 qualified NPN general-purpose low VCE(sat) amplifier. This NPN bipolar transistor has matched dies and operates at -55°C to 150°C storage temperature range. The NSVT5551M BJT Pb-free, halogen-free, BFR-free, and RoHS-compliant. This transistor is generally used for many different applications.

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