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SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
£20.78
-
714In Stock
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Mouser Part No
511-SCTW70N120G2V
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STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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714In Stock
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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1.2 kV
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91 A
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21 mOhms
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- 10 V, + 22 V
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4.9 V
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150 nC
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- 55 C
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+ 200 C
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547 W
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Enhancement
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|
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
£14.59
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47In Stock
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600Expected 20/04/2026
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Mouser Part No
511-SCTW90N65G2V
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STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
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47In Stock
600Expected 20/04/2026
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£14.59
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£13.71
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£13.62
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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650 V
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90 A
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25 mOhms
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- 10 V, + 22 V
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1.9 V
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157 nC
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- 55 C
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+ 200 C
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390 W
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Enhancement
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SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
£6.67
-
592In Stock
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Mouser Part No
511-SCT1000N170
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STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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592In Stock
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£6.67
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£4.57
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£3.37
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£3.07
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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1.7 kV
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6 A
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1 Ohms
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- 10 V, + 25 V
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2.1 V
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14 nC
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- 55 C
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+ 200 C
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120 W
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Enhancement
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
£11.93
-
510In Stock
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Mouser Part No
511-SCT20N120AG
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STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
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510In Stock
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£11.93
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£8.81
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£6.14
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View
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Quote
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Min.: 1
Mult.: 1
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Through Hole
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N-Channel
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1 Channel
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1.2 kV
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20 A
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239 mOhms
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- 20 V, + 20 V
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3.5 V
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45 nC
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- 55 C
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+ 200 C
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175 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
£12.91
-
593In Stock
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Mouser Part No
511-SCTW40N120G2VAG
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STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
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593In Stock
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£12.91
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£8.01
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£7.27
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
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N-Channel
|
1 Channel
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1.2 kV
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36 A
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100 mOhms
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- 10 V, + 22 V
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4.9 V
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61 nC
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- 55 C
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+ 200 C
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278 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
£19.24
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317In Stock
-
NRND
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Mouser Part No
511-SCTW100N65G2AG
NRND
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STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
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317In Stock
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
|
N-Channel
|
1 Channel
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650 V
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100 A
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69 mOhms
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- 10 V, + 22 V
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5 V
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162 nC
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- 55 C
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+ 200 C
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420 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
£21.69
-
151In Stock
|
Mouser Part No
511-SCTWA90N65G2V-4
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STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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151In Stock
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£21.69
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£16.53
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£15.26
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£13.71
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Min.: 1
Mult.: 1
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Through Hole
|
HiP-247-4
|
N-Channel
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1 Channel
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650 V
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119 A
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24 mOhms
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- 10 V, + 22 V
|
5 V
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157 nC
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- 55 C
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+ 200 C
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565 W
|
Enhancement
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|
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SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
£6.89
-
844Expected 23/11/2026
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Mouser Part No
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
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844Expected 23/11/2026
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£6.89
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£3.90
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£3.22
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Min.: 1
Mult.: 1
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Through Hole
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N-Channel
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1 Channel
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1.2 kV
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12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
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- 55 C
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+ 200 C
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150 W
|
Enhancement
|
AEC-Q101
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|
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
£21.20
-
69Expected 16/03/2026
|
Mouser Part No
511-SCTWA90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
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69Expected 16/03/2026
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£21.20
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£13.73
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£13.66
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Min.: 1
Mult.: 1
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Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
- SCT018W65G3AG
- STMicroelectronics
-
600:
£7.91
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT018W65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
76 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3
- STMicroelectronics
-
600:
£9.71
-
Non-Stocked
-
New Product
|
Mouser Part No
511-SCT040W120G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
Non-Stocked
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
-10 V, 22 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
United Kingdom
