RF MOSFET Transistors

Results: 627
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Rds On - Drain-Source Resistance Operating Frequency Gain Output Power Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
STMicroelectronics RF MOSFET Transistors N-Ch 65 Volt 4 Amp Non-Stocked Lead-Time 28 Weeks
Min.: 50
Mult.: 50

N-Channel Si 4 A 65 V 1 GHz 13 dB 30 W - 65 C + 150 C SMD/SMT M243-3 Bulk
STMicroelectronics RF MOSFET Transistors N-Ch 65 Volt 4 Amp Non-Stocked Lead-Time 28 Weeks
Min.: 50
Mult.: 50

N-Channel Si 4 A 65 V 1 GHz 13 dB 30 W - 65 C + 150 C SMD/SMT M250 Bulk
STMicroelectronics RF MOSFET Transistors N-Ch 65 Volt 5 Amp Non-Stocked Lead-Time 28 Weeks
Min.: 50
Mult.: 50

N-Channel Si 5 A 65 V 1 GHz 13 dB 45 W - 65 C + 150 C SMD/SMT M250 Bulk
STMicroelectronics RF MOSFET Transistors 250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz Non-Stocked
Min.: 120
Mult.: 120
Reel: 120

N-Channel Si 90 V 945 MHz 13.4 dB 250 W + 200 C SMD/SMT B4E-5 Reel
STMicroelectronics RF MOSFET Transistors 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor Non-Stocked
Min.: 300
Mult.: 300
Reel: 300

N-Channel Si 90 V 930 MHz 21 dB 12 W + 200 C SMD/SMT MM-2 Reel
STMicroelectronics RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz Non-Stocked Lead-Time 28 Weeks
Min.: 50
Mult.: 50

N-Channel Si 9 A 90 V 1.5 GHz + 200 C SMD/SMT M243-3 Bulk
STMicroelectronics RF MOSFET Transistors POWER R.F. Non-Stocked Lead-Time 28 Weeks
Min.: 80
Mult.: 80

N-Channel Si 20 A 250 V 250 MHz 24.6 dB 580 W - 65 C + 150 C SMD/SMT STAC-244B Bulk
Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) Full-Bridge 13.56 MHz Reference Design Kit Non-Stocked
Min.: 1
Mult.: 1
N-Channel Si 30 A 500 V 330 mOhms 30 MHz - 55 C + 175 C Screw Mount
Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 Non-Stocked
Min.: 10
Mult.: 10
N-Channel Si 75 A 180 V 17 dB + 200 C Screw Mount
Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 Non-Stocked
Min.: 10
Mult.: 10
N-Channel Si 75 A 180 V 17 dB + 200 C Screw Mount
Toshiba RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS Non-Stocked
Min.: 1,000
Mult.: 1,000
Reel: 1,000

N-Channel Si 3 A 10 V 470 MHz 13.5 dB 2.2 W SMD/SMT PW-X-4 Reel
Toshiba RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 0.1A 0.25W 20V Non-Stocked
Min.: 3,000
Mult.: 3,000
Reel: 3,000

N-Channel Si 100 mA 20 V 520 MHz 13 dB 200 mW SMD/SMT SOT-343-4 Reel
Toshiba RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V Non-Stocked
Min.: 1,000
Mult.: 1,000
Reel: 1,000

N-Channel Si 4 A 20 V 520 MHz 10.8 dB 12 W SMD/SMT PW-X-4 Reel
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V Non-Stocked Lead-Time 14 Weeks
Min.: 240
Mult.: 240
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 330 W + 150 C Through Hole TO-247-3 Tube
MACOM RF MOSFET Transistors Transistor,Mosfet,120W,2-175MHz,28V Non-Stocked Lead-Time 26 Weeks
Min.: 20
Mult.: 20

N-Channel Si 6 mA 65 V 2 MHz to 175 MHz 13 dB 120 W SMD/SMT
MACOM RF MOSFET Transistors 5-175MHz 80Watts 28Volt Gain 13dB Lead-Time 36 Weeks
Min.: 1
Mult.: 1

N-Channel Si 9 A 65 V 200 MHz 13 dB 80 W - 65 C + 150 C SMD/SMT 221-11-3 Tray
MACOM RF MOSFET Transistors 5-500MHz 100Watts 28Volt Gain 8.8dB Non-Stocked Lead-Time 28 Weeks
Min.: 20
Mult.: 20

N-Channel Si 13 A 65 V 500 MHz 8.8 dB 100 W - 65 C + 150 C SMD/SMT 333-04 Tray
MACOM RF MOSFET Transistors 100-500MHz 40Watts 28Volt Gain 10dB Non-Stocked Lead-Time 26 Weeks
Min.: 20
Mult.: 20
N-Channel Si 65 V 100 MHz to 500 MHz 10 dB 40 W - 55 C + 150 C SMD/SMT 319-07 Tray
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications Non-Stocked
Min.: 1
Mult.: 1

GaAs 90 mA to 120 mA 26 GHz 16 dB 25 dBm + 150 C Die Bulk
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications Non-Stocked
Min.: 1
Mult.: 1

GaAs 160 mA to 200 mA 18 GHz 13 dB 28.5 dBm + 150 C Die Bulk
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications Non-Stocked
Min.: 1
Mult.: 1

GaAs 40 mA to 60 mA 28 GHz 14 dB 21.5 dBm + 150 C Die Bulk
Ampleon RF MOSFET Transistors ART150PEG/REEL Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500

N-Channel LDMOS 65 V 497 mOhms 1 MHz to 650 MHz 31.2 dB 150 W + 225 C SMD/SMT TO-270-2G-1-3 Reel
Ampleon RF MOSFET Transistors ART150PE/REELDP Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500

N-Channel LDMOS 65 V 497 mOhms 1 MHz to 650 MHz 31.2 dB 150 W + 225 C SMD/SMT TO-270-2F-1-3 Reel
Ampleon RF MOSFET Transistors ART1K6FHG/SOT1248/REEL Non-Stocked Lead-Time 16 Weeks
Min.: 100
Mult.: 100
Reel: 100

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C SMD/SMT SOT1248C-5 Reel
Ampleon RF MOSFET Transistors ART1K6FHS/SOT539/TRAY Non-Stocked Lead-Time 16 Weeks
Min.: 60
Mult.: 60

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C SMD/SMT SOT539BN-5 Tray