Vishay / Siliconix Si8481DB 20V P-Channel TrenchFET® Gen III MOSFET
Vishay / Siliconix Si8481DB 20V P-Channel TrenchFET® Gen III MOSFET features low on-resistance and low 0.6mm (maximum) height. This power MOSFET is available in a single-configuration Micro Foot® package. Vishay / Siliconix Si8481DB 20V P-Channel TrenchFET Gen III MOSFET operates in a -55°C to +150°C temperature range. Typical applications include load switches with low voltage drop, and power management in battery-operated, mobile, and wearable devices.
Features
- TrenchFET Gen III p-channel power MOSFET
- Low 0.6mm maximum height
- Low on-resistance
- -55°C to +150°C operating temperature range
Applications
- Load switches with low voltage drop
- Power management in battery-operated, mobile, and wearable devices
Specifications
Circuit Diagram
Related MOSFETs
Vishay / Siliconix TrenchFET Gen III P-Channel Power MOSFETs
Features low on-resistance, low-voltage drops, increased efficiency, and battery time.
Published: 2017-07-14
| Updated: 2022-06-30