STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs
STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Qg), very low recovery charge (Qrr), low recovery time (trr), and an excellent RDS(on) per area.
Features
- Extremely low RDS(on) area, low gate charge (Qg), and very low recovery charge (Qrr)
- Optimized capacitance profile for light load conditions
- Extremely high dV/dt
- Optimized body diode recovery phase
- Optimized softness
- Extremely high efficiency performance and increased power density
- More robust power conversion in ZVS, full bridge, and half bridge topologies
- High operation frequencies and excellent thermal management
- Low EMI
Applications
- Charging stations for electric vehicles
- LED lighting
- Telecom
- Servers
- Solar inverters
Series Level Diagram
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STMicroelectronics Latest Technologies in Power MOSFET & IGBT
The newest technologies in Power MOSFETs and IGBTs.
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Published: 2018-11-15
| Updated: 2023-02-23