onsemi NVBLS1D7N10MCTXG N-Channel PowerTrench® MOSFET
onsemi NVBLS1D7N10MCTXG N-Channel PowerTrench® MOSFET supplies a high thermal performance and low RDS(on) to minimize conduction losses. The NVBLS1D7N10MCTXG is AEC-Q101 qualified and PPAP capable, ideal for automotive applications.
The NVBLS1D7N10MCTXG MOSFET is offered in a TOLL package with a -55°C to +175°C operating junction and storage temperature range.
Features
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- AEC-Q101 qualified and PPAP capable
- Lowers switching noise/EMI
- Pb-free and RoHS-compliant
Applications
- Switching power supplies
- Power switches (high side driver, low-side driver, H-bridges, etc.)
- Reverse battery protection
Specifications
- 265A maximum continuous drain current
- 1.8mΩ at 10V RDS(ON) maximum
- 100V drain-to-source voltage
- ±20V gate-to-source voltage
- 900A pulsed drain current
- -55°C to +175°C operating junction and storage temperature range
Additional Resources
Typical Application
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onsemi PowerTrench® MOSFETs
Broad portfolio of N-channel and P-channel versions for low RDS(ON) switching performance.
Published: 2023-12-26
| Updated: 2024-11-07