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Nexperia PSC1065K Silicon Carbide (SiC) Schottky Diodes

Nexperia PSC1065K Silicon Carbide (SiC) Schottky Diode is designed for ultra-high performance, low-loss, high-efficiency power conversion applications. The Nexperia PSC1065K SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature-independent capacitive turn-off, zero recovery switching behavior, and an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.

Features

  • Zero forward and reverse recovery
  • Temperature-independent switching performance
  • Outstanding figure-of-merit (Qc x VF)
  • High IFSM capability
  • High power density
  • Reduced system cost
  • System miniaturization
  • Reduced EMI

Applications

  • Switch Mode Power Supply (SMPS)
  • AC-DC and DC-DC converter
  • Battery charging infrastructure
  • Server and telecom power supply
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic inverters

Additional Resources

Package Range

Chart - Nexperia PSC1065K Silicon Carbide (SiC) Schottky Diodes

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Published: 2023-07-07 | Updated: 2025-06-20