WeEn Semiconductors BYV10D-600P Ultrafast Power Diode
WeEn Semiconductors BYV10D-600P Ultrafast Power Diode offers a low thermal resistance in a TO-252 (DPAK) plastic package. The BYV10D-600P Ultrafast Power Diode features a low forward voltage drop, low reverse recovery current, and low leakage current. The WeEn Semi BYV10D-600P Diode has a 600V repetitive peak reverse voltage and a junction temperature of +175°C.
Features
- Low forward voltage drop
- Low leakage current
- Soft reverse recovery characteristics
- High thermal cycling performance
Applications
- Home appliance power supplies
- Discontinuous current mode (DCM) power factor correction (PFC)
Specifications
- 600V Repetitive peak reverse voltage
- 10A Average forward current
- +175°C Tj (max.) junction temperature
- 1.3V Forward voltage
- 75ns Reverse recovery time
Package Outline
Published: 2020-12-08
| Updated: 2025-01-06