Vishay Semiconductors K857 Silicon PIN Photodiodes

Vishay Semiconductors K857 Silicon PIN Photodiodes are four-quadrant photodetectors with a 1.6mm2/quadrant active area in a surface-mount package. These photodiodes operate in a -40°C to +110°C temperature range and come in a compact size of 4.72mm x 4.72mm x 0.75mm (L x W x H). These automotive-grade photodiodes feature a typical 1nA to 10nA (max) reverse dark current and are AEC-Q101 qualified, halogen free, lead free, and RoHS compliant.

The K857PE series features epitaxial technology, high photosensitivity, 1.3V maximum forward voltage, and 20V reverse voltage. The K857PE photodiodes offer a 690nm to 1050nm spectral bandwidth range, 840nm peak sensitivity wavelength, and 30ns rise and fall time.

The K857PH series from Vishay offers homogeneous technology, 1.5V maximum forward voltage, and 10V reverse voltage. The K857PH photodiodes provide a 710nm to 1100nm spectral bandwidth range, 950nm peak sensitivity wavelength, and 3.9μs rise time and 2.5μs fall time.

Features

Surface-mount package type
Epitaxial or homogeneous technology
AEC-Q101 qualified
High photosensitivity
1nA (typical) to 10nA (maximum) reverse dark current

4.72mm x 4.72mm x 0.75mm dimensions (L x W x H)
+260°C soldering temperature
-40°C to +110°C operating and storage temperature range
Halogen free and lead free
RoHS compliant

Specifications

K857PE
- 20V reverse voltage
- 1.3V maximum forward voltage
- 690nm to 1050nm range of spectral bandwidth
- 840nm peak sensitivity wavelength
- 30ns rise and fall time

K857PH
- 10V reverse voltage
- 1.5V maximum forward voltage
- 710nm to 1100nm range of spectral bandwidth
- 950nm peak sensitivity wavelength
- 3.9μs rise time and 2.5μs fall time