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onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs

onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs feature a 177A continuous drain current, 2.8mΩ at 10V RDS(ON), and 100V drain-to-source voltage. The NVMFWS002N10MCL is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

  • Small footprint (5mm x 6mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101-qualified and PPAP capable
  • Pb-free, halogen-free/BFR-free, beryllium-free, and RoHS-compliant

Applications

  • 48V systems
  • Switching power supplies
  • Reverse battery protection
  • Power switches (high-side driver, low-side driver, H-bridges, etc)

Specifications

  • 177A maximum continuous drain current
  • 2.8mΩ at 10V or 3.8mΩ at 4.5V RDS(ON) maximum
  • 100V Drain-to-Source voltage
  • ±20V Gate-to-Source voltage
  • 900A Pulsed drain current
  • -55°C to +175°C Operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs
Published: 2024-01-03 | Updated: 2024-03-01