onsemi NVH4L022N120M3S Silicon Carbide (SiC) MOSFETs
ON Semiconductor NVH4L022N120M3S Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The ON Semiconductor NVH4L022N120M3S features low ON resistance and a compact chip size that ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.Features
- Typ. RDS(on) = 22m @ VGS = 18V
- Ultra-low gate charge (QG(tot) = 151nC)
- High-speed switching with low capacitance (Coss = 244pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- This device is halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)
Applications
- Automotive on-board charger
- Automotive DC-DC converter for EV/HEV
- Automotive traction inverter
Published: 2023-01-05
| Updated: 2025-03-04
