onsemi NTHL015N065SC1 12mohm Silicon Carbide MOSFETs
onsemi NTHL015N065SC1 12mohm Silicon Carbide MOSFETs are housed in a TO-247-3L package and designed to be fast and rugged. The onsemi NTHL015N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.
Features
- Typ. RDS(on) = 12m @ VGS = 18V
- Typ. RDS(on) = 15m @ VGS = 15V
- Ultra Low Gate Charge (QG(tot) = 283nC)
- High-Speed Switching with Low Capacitance (Coss = 430pF)
- 100% Avalanche Tested
- This Device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)
Applications
- SMPS (Switching Mode Power Supplies)
- Solar inverters
- UPS (Uninterruptable Power Supplies)
- Energy storage
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onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Published: 2022-08-23
| Updated: 2023-07-27