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onsemi NTBG022N120M3S 1200V M3S Series SiC MOSFET

onsemi NTBG022N120M3S 1200V M3S Series SiC (Silicon Carbide) MOSFET is optimized for fast switching applications and offers a low 22mΩ drain-to-source on-resistance. The M3S Series SiC MOSFETs provide optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive. This device features planar technology, which works reliably with a negative gate voltage drive and turns off spikes on the gate. 

The onsemi NTBG022N120M3S 1200V M3S Series SiC MOSFET is housed in a D2PAK-7L package for low common source inductance.

Features

  • Optimized for fast switching applications
  • Low switching losses
  • 485µJ typical turn-on switching loss @ 40A, 800V
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • 100% avalanche tested
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

Applications

  • AC-DC conversion
  • DC-AC conversion
  • DC-DC conversion
  • Switch mode power supplies (SMPS)
  • UPS
  • Electric vehicle chargers
  • Solar inverters
  • Energy storage systems

Specifications

  • 1200V drain-to-source voltage (VDSS)
  • 22mΩ drain-to-source on-resistance (RDS(on))
  • -10V/+22V gate-to-source voltage (VGS)
  • 0.3V/°C drain-to-source breakdown voltage temperature coefficient (V(BR)DSS/TJ)
  • 100µA zero gate voltage drain current (IDSS)
  • ±1µA gate-to-source leakage current (IGSS)
  • Continuous drain current (ID)
    • 58A @ TC = 25°C
    • 41A @ TC = 100°C
  • Power dissipation (PD)
    • 234W @ TC = 25°C
    • 117W @ TC = 100°C
  • 2.04V to 4.4V gate threshold voltage; 2.72V typical (VGS(TH))
  • 3200pF input capacitance (CISS)
  • 148pF output capacitance (COSS)
  • 14pF reverse transfer capacitance (CRSS)
  • 18ns turn-on delay time (td(ON))
  • 24ns rise time (tr)
  • 47ns turn-off delay time (td(OFF))
  • 14ns fall time (tf)
  • 23ns reverse recovery time (tRR)
  • -55°C to +175°C operating junction and storage temperature range (TJ, Tstg)
  • D2PAK7 (TO-263-7L HV) package

Resources

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Internal Schematic

Schematic - onsemi NTBG022N120M3S 1200V M3S Series SiC MOSFET

Package Outline

Mechanical Drawing - onsemi NTBG022N120M3S 1200V M3S Series SiC MOSFET

Learn More About EliteSiC

onsemi EliteSiC

Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.

Learn Moreabout onsemi EliteSiC
Published: 2022-08-24 | Updated: 2024-06-19