onsemi NDSH20120C-F155 Silicon Carbide Schottky Diode
onsemi NDSH20120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH20120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.
Features
- +175°C maximum junction temperature
- 166mJ Avalanche rated, single pulse
- High surge current capacity
- Positive temperature coefficient
- Ease of paralleling
- No reverse/forward recovery
- TO-247-2LD case
- Lead-free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- General purpose
- Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
- Power switching circuits
Specifications
- 1200V maximum peak repetitive reverse voltage
- 20A to 26A maximum continuous rectified forward current range
- Maximum forward surge current
- 854A to 896A non-repetitive peak range
- 119A non-repetitive
- 40A repetitive
- Maximum power dissipation
- 214W at +25°C
- 35W at +150°C
- 1.38V to 1.87V typical forward voltage range
- 200µA maximum reverse current
- 100nC typical total capacitive charge
- 58pF (at 800V) to 1480pF (at 1V) typical total capacitance range
- Maximum thermal resistance
- 0.7°C/W junction-to-case
- 40°C/W junction-to-ambient
- -55°C to +175°C operating temperature range
Related Solutions
onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Published: 2024-02-09
| Updated: 2024-06-19