onsemi NCP5892 Enhanced Mode GaN Power Switches
onsemi NCP5892 Enhanced Mode GaN Power Switch integrates a high-performance, high-frequency Silicon (Si) driver and 650V Gallium-Nitride (GaN) High-Electron-Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si driver and power GaN HEMT switch provides superior performance compared to the discrete solution GaN HEMT and external driver. The onsemi NCP5892 integrated implementation significantly reduces circuit and package parasitics while enabling a more compact design.
Features
- Maximum drain voltage of 650V
- Drain-source on-state resistance [RDS(ON)]
- NCP58920 - 150mΩ
- NCP58921 - 50mΩ
- NCP58922 - 78mΩ
- 30ns typical driver propagation delay
- 8mm x 8mm TQFN26 package minimizes parasitic inductances
- Driver turn-on process is adjustable via an external resistor, which enables EMI optimization under hard switching conditions
- GDS logic input that switches driver strength to easy accompanying with QR flyback controllers
- 2.75mm creepage distance for maximum reliability
- 6.0V driver clamp voltage regulator
- TTL-compatible Schmitt trigger and rail-to-rail PWM input
- UVLO protections
- NCP58920 and NCP58921 for VDD and VDR supplies
- NCP58922 for VDD and VDDL supplies
- Up to 200V/ns dV/dt slew rate transient immunity
- +5V LDO output to supply digital insulators with current up to 20mA for NCP58921
- 20V maximum VDD ratings
- Lead-free, Halogen-free, and RoHS-compliant
Applications
- Power conversion
- High power density power supplies
- All double-ended topologies of half-bridges, full-bridges, or LLC
- Active clamp flyback or QR flyback
- High-voltage synchronous buck converters
- High-voltage synchronous boost converters
- Two-switch forward converters
- Two-switch flyback converters
- Synchronous PFC stages
- Totem pole PFCs
Simplified Block Diagrams
Published: 2025-02-26
| Updated: 2025-03-04