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NXP Semiconductors A5G38H045N Evaluation Board

NXP Semiconductors A5G38H045N Evaluation Board is used with the A5G38H045N RF MOSFET Transistor. The board is designed for 64T, 200W radio units (3W avg. at each antenna). Its target band is B77D and is a GaN discrete solution for US C-band market 64T mMIMO.

Features

  • 48V GaN discrete transistor
  • At 9.5 dB OBO
    • 37.3dBm avg. (5W)
    • 15dB gain
    • 51% drain efficiency (Doherty)
  • 3700-3980MHz
  • 46.8dBm peak (48W)
  • DFN 7 x 6.5 over-molded plastic package
  • Asymmetric – 2:1, input and output pre-matched

Typical Lineup

NXP Semiconductors A5G38H045N Evaluation Board
Published: 2022-04-26 | Updated: 2023-01-11