Microchip Technology 1200V SIC MOSFETs
Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.
The Microchip 1200V SIC MOSFETs eliminate the need for an external freewheeling diode and provide superior avalanche ruggedness in a fast and reliable body diode.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175°C
- Fast and reliable body diode
- Superior avalanche ruggedness (100% UIS production tested)
- Creepage distance (typ. >8mm)
Applications
- Photovoltaic (PV) inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
- Power supply and distribution
Typical Application
View Results ( 8 ) Page
| Part Number | Datasheet | Rds On - Drain-Source Resistance | Id - Continuous Drain Current |
|---|---|---|---|
| MSC020SMB120B4N |  |
24 mOhms | 97 A |
| MSC025SMB120B4N | |
33 mOhms | 81 A |
| MSC030SMB120B4N | |
40 mOhms | 69 A |
| MSC040SMB120B4N | |
53 mOhms | 54 A |
| MSC045SMB120B4N | |
60 mOhms | 49 A |
| MSC060SMB120B4N | |
80 mOhms | 38 A |
| MSC080SMB120B4N | |
107 mOhms | 30 A |
| MSC031SMC120B4N | |
42 mOhms | 72 A |
Published: 2025-09-19
| Updated: 2025-09-29