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MACOM CGHV35400F 400W 50Ω I/O Matched GaN HEMT

MACOM CGHV35400F 400W 2.9GHz to 3.5GHz, 50Ω I/O Matched GaN HEMT for S-Band radar amplifier applications offers high efficiency, high gain, and vast bandwidth capabilities. The CGHV35400F transistor is matched to 50Ω on the input and 50Ω on the output.

The MACOM CGHV35400F HEMT is based on Cree’s high power density 50V, 0.4μm GaN on silicon carbide (SiC) foundry process. The device is housed in a ceramic/metal flange package, type 440225.

Features

  • 2.9GHz to 3.5GHz Operation
  • 500W Typical output power
  • 11dB Power gain
  • 70% Typical drain efficiency
  • 50Ω internally matched
  • <0.3dB Pulsed amplitude droop

Specification Chart

Chart - MACOM CGHV35400F 400W 50Ω I/O Matched GaN HEMT

Development Tools

MACOM CGHV35400F1-AMP Evaluation Board

Engineered to evaluate the CGHV35400F 400W 2.9GHz to 3.5GHz HEMT for S-Band radar amp applications.

Learn Moreabout MACOM CGHV35400F1-AMP Evaluation Board View Productsrelated to MACOM CGHV35400F1-AMP Evaluation Board
Published: 2021-09-12 | Updated: 2024-08-16