ISSI IS25WP512M & IS25LP512M Serial NOR Flash
ISSI IS25WP512M & IS25LP512M Serial NOR Flash is a versatile storage solution with high flexibility and performance in a simplified pin count package. The device is for systems that require limited space, a low pin count, and low power consumption. It is accessed through a 4-wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi-I/O. The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4), which equates to 66.5Mbytes/s of data throughput. The memory array is organized into programmable pages of 256/512 bytes.
Features
- Industry Standard Serial Interface
- IS25LP512M: 512Mbit/64Mbyte
- IS25WP512M: 512Mbit/64Mbyte
- 3 or 4 byte addressing Mode
- Supports standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI
- Software and hardware reset
- Supports serial flash discoverable
- Parameters (SFDP)
- High-Performance Serial Flash (SPI)
- 80MHz normal read
- Up to133Mhz fast read
- Up to 80MHz DTR (Dual Transfer Rate)
- Equivalent throughput of 532Mb/s
- Selectable dummy cycles
- Configurable drive strength
- Supports SPI Modes 0 and 3
- More than 100,000 erase/program cycles
- More than 20-year data retention
- Flexible and efficient memory architecture
- Chip erase with uniform sector/block erase (4/32/64KB or 4/32/256 KB)
- Program 1 to 256 or 512 byte per page
- Program/erase suspend and resume
- Efficient read and program modes
- Low instruction overhead operations
- Continuous read 8/16/32/64 byte
- Burst wrap
- Selectable burst length
- QPI for reduced instruction overhead
- AutoBoot operation
- Data learning pattern for training in DTR operation
- Low power with wide temperature ranges
- Single voltage supply: IS25LP: 2.30V to 3.60V and IS25WP: 1.65V to 1.95V
- 7mA active read current
- 10µA standby current
- 1µA deep power down
- Temperature grades:
- Extended: -40°C to +105°C
- Auto grade (A3): -40°C to +125°C
- Advanced security protection
- Software and hardware write protection
- Advanced sector/block protection
- Top/bottom block protection
- Power supply lock protection
- 4x256 byte dedicated security area with OTP user-lockable bits
- 128 bit Unique ID for Each Device (Call Factory)
Applications
- Instrument clusters
- Infotainment consoles
- Telematics
- Safety systems (ADAS)
- Smart TV STB
- HDD
- Printers
- Gaming
- Industrial controls
- Medical devices
- Military and aerospace
- Wireless access points
- 4G LTE base stations
- Routers and switches
- Home networking
- Energy smart grid management
Block Diagram
Associated Product
ISSI SPI NOR Flash ICs
SPI Flash Memory Devices offering densities from 256Kb to 512Mb.