Infineon Technologies CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).Features
- No reverse recovery charge
- Purely capacitive switching
- High operating temperature (Tj, max 175°C)
- Low turn-off losses
- Reduction of CoolMOS™ or IGBT turn-on loss
- System efficiency improvement compared to Si diodes
- Switching losses independent from load current, switching speed, and temperature
- Reduced cooling requirements
- Enables higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Applications
- Server
- Telecom
- Solar
- UPS
- Energy storage, chargers
- PC power
- Motor drives
- Lighting
Additional Resources
- EiceDRIVER™ Gate Driver ICs Product Selection Guide
- In the heart of power: CoolMOS™ - CoolSiC™ - CoolGaN™ Product Selection Guide
- Silicon Carbide CoolSiC™ Diodes - 650V G6, 650V G5, 650V G3, 1200V G5 Product Selection Guide
- Residential solar systems Application Brochure
- CoolSiC™ schottky diodes 600V 650V 1200V G5 Reliability Considerations White Paper
- CoolSiC™ schottky diodes 600V 650V 1200V G5 SMPS Circuit Designs White Paper
- 2020 Power and Sensing Selection Guide
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Published: 2019-06-10
| Updated: 2024-01-10
