Diodes Incorporated DXTP80x PNP Bipolar Transistors

Diodes Incorporated DXTP80x PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI® 3333-8 package, allowing higher-density end products. The devices supply a >-30V, -60V, or -100V collector-emitter voltage and a >-8V emitter-base voltage. The DXTP80x is ideal for high-temperature environments, with a temperature rating of +175°C. The Diodes Inc. PNP bipolar transistors are excellent for motors, solenoids, relays, and actuator driver controls.

Features

  • BVCEO >-30V, -60V, or -100V
  • BVEBO >-8V
  • Continuous current IC from -4A to -7.5A
  • Peak pulse current ICM to -10A to -14A
  • Ultra-low saturation voltage VCE(sat) <-35mV at -1A, <-50mV at -1A, or <-70mV at -1A
  • High current RCE(sat) = 13mΩ, 26mΩ, or 40mΩ typical
  • Small form factor thermally efficient package enables higher density end products
  • Wettable flank for improved optical inspection
  • Rated to +175°C - ideal for high-temperature environments
  • Lead-free finish; RoHS compliant
  • Halogen and antimony-free - “Green” device

Applications

  • MOSFET and IGBT gate drivers
  • Load switches
  • Low-voltage regulation
  • DC to DC converters
  • Motors, solenoids, relays, and actuator driver controls

Specifications

  • PowerDI 3333-8 package
  • Package material of molded plastic, “Green” molding compound, UL flammability rating 94V-0
  • Moisture sensitivity of Level 1 per J-STD-020
  • Finish - matte tin terminals, solderable per MIL-STD-202, Method 208

Package Style

Application Circuit Diagram - Diodes Incorporated DXTP80x PNP Bipolar Transistors
Published: 2025-09-09 | Updated: 2025-09-18