Alliance Memory AS6C8008B & AS6C8016B Super Low Power CMOS SRAM
Alliance Memory AS6C8008B & AS6C8016B Super Low Power CMOS SRAM is a low-power CMOS static random access memory. The devices are organized as 524,288 words by 8- or 16-bits. The memory is fabricated using very high-performance, high-reliability CMOS technology. Its standby current is stable within the range of operating temperature.
Features
- Fast access time 45/55ns
- Low power consumption
- Standby current: 2.5µA (Typ.)
- Single 2.7V ~ 3.6V power supply
- All inputs and outputs TTL compatible
- Fully static operation
- Tri-state output
- Data retention voltage 1.5V (Min.)
- Package 44-pin 400mil TSOP II
Block Diagram
View Results ( 2 ) Page
| Part Number | Datasheet | Description |
|---|---|---|
| AS6C8016B-45ZIN |  |
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray |
| AS6C8008B-45ZIN | |
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray |
Published: 2022-06-08
| Updated: 2022-06-16