CoolSIC SiC MOSFETs

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 1,117In Stock
1,680On Order
£34.11
£25.36
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 89 A 33 mOhms - 10 V, + 23 V 3.5 V 137 nC - 55 C + 150 C 576 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 116In Stock
1,920Expected 15/10/2026
£18.80
£11.86
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 48 A 64 mOhms - 10 V, + 23 V 3.5 V 82 nC - 55 C + 150 C 348 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 746In Stock
480Expected 15/10/2026
£15.64
£9.49
Min.: 1
Mult.: 1
Max.: 240
Through Hole TO-247-4 1 Channel 2 kV 34 A 98 mOhms - 10 V, + 23 V 3.5 V 64 nC - 55 C + 150 C 267 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package Lead-Time 53 Weeks
£59.78
£49.72
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 123 A 16.5 mOhms - 10 V, + 23 V 3.5 V 246 nC - 55 C + 150 C 552 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
2,089Expected 22/07/2027
£14.47
£8.31
£7.97
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 26 A 131 mOhms - 10 V, + 23 V 3.5 V 55 nC - 55 C + 150 C 217 W Enhancement CoolSIC