CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4,511In Stock
Cut Tape
£2.92
£1.48
£1.34
£1.10
£1.06
Reel
£0.934
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,815In Stock
Cut Tape
£2.16
£1.07
£0.96
£0.773
Reel
£0.614
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,699In Stock
Cut Tape
£1.88
£0.917
£0.78
£0.651
Reel
£0.512
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,547In Stock
1,800Expected 17/12/2026
Cut Tape
£8.03
£4.46
£4.23
£3.60
Reel
£3.60
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 798In Stock
1,800Expected 07/12/2026
Cut Tape
£5.94
£3.50
£3.21
£3.13
£2.68
Reel
£2.68
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,163In Stock
Cut Tape
£3.75
£2.19
£1.83
£1.54
£1.42
Reel
£1.20
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 556In Stock
800Expected 07/12/2026
Cut Tape
£10.07
£6.71
£6.22
£5.39
Reel
£4.70
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 453In Stock
800Expected 30/11/2026
Cut Tape
£8.28
£4.61
£4.40
£3.74
Reel
£3.74
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,228In Stock
Cut Tape
£6.63
£3.61
£3.24
Reel
£2.86
£2.79
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 573In Stock
Cut Tape
£5.53
£2.97
£2.72
£2.19
Reel
£2.19
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
23,329On Order
Cut Tape
£9.58
£5.41
£5.33
£4.53
Reel
£4.53
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
5,400On Order
Cut Tape
£5.49
£3.04
£2.78
£2.63
£2.11
Reel
£2.11
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN