NVHL015N065SC1

onsemi
863-NVHL015N065SC1
NVHL015N065SC1

Mfr.:

Description:
SiC MOSFETs SIC MOS TO247-3L 650V

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi NVHL015N065SC1

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
163 A
12 mOhms
- 8 V, + 22 V
4.3 V
283 nC
- 55 C
+ 175 C
643 W
Enhancement
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 11 ns
Forward Transconductance - Min: 44 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 77 ns
Series: NVHL015N065SC1
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 47 ns
Typical Turn-On Delay Time: 25 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

NVHL015N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NVHL015N065SC1 Silicon Carbide (SiC) MOSFET employs new technology that provides superior switching performance and high reliability. This SiC MOSFET features n-channel, high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The NVHL015N065SC1 MOSFET offers low ON resistance and compact chip size, which ensures low capacitance and gate charge. This EliteSiC MOSFET is 100% UIL tested and AEC−Q101 qualified. The NVHL015N065SC1 MOSFET features 650V drain−to−source voltage and 12mohm resistance. Typical applications include automotive traction inverters, DC/DC converters for EV/HEV, and onboard chargers.

In Stock: 390

Stock:
390 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£29.20 £29.20
£21.68 £216.80
£21.67 £2,600.40
510 Quote

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.