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RM10N100LDV-T

Name: Rectron RM10N100LDV-T
Brand: Rectron
SKU: 583-RM10N100LDV-T
Price: 0.98 GBP
Availability: InStock

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Mouser No:

583-RM10N100LDV-T

Mfr. No:

RM10N100LDV-T

Mfr.:

Rectron

Description:

MOSFETs

Datasheet:

RM10N100LDV-T Datasheet (PDF)

ECAD Model:

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Learn more about Rectron RM10N100LDV-T

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Rectron
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-2
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	21.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Rectron
Configuration:	Single
Fall Time:	9.1 ns
Forward Transconductance - Min:	3.5 S
Pin Count:	2
Product Type:	MOSFETs
Rise Time:	7.4 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

RM10N100LDV-T Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

RM10N100LD N-Channel Enhancement Mode Power MOSFET

Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET uses trench technology to provide excellent RDS(ON) with a low gate charge. The device can be used in various applications.

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RM10N100LD N-Channel Enhancement Mode Power MOSFET

Uses trench technology to provide excellent RDS(ON) with a low gate charge.

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Uses advanced trench technology to provide excellent R_DS(ON).

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RM3134 Dual N-Channel MOSFET

Lead-free product housed in a surface mount package.

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RM135N100HD N-Channel Super Trench Power MOSFET

Features Super Trench technology optimized for efficient high-frequency switching performance.

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RM150N60HD N-Channel Enhancement Mode Power MOSFET

Features advanced Trench technology and design to provide excellent R_DS(ON) and a low gate charge.

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In Stock: 859

Stock:: 859 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£0.984	£0.98
	£0.605	£6.05
	£0.399	£39.90
	£0.314	£157.00
	£0.275	£275.00
Full Reel (Order in multiples of 2500)
	£0.234	£585.00
	£0.214	£1,070.00
	£0.207	£2,070.00
	£0.202	£5,050.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

RM10N100LDV-T

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Mfr.: Rectron

Description: MOSFETs

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

RM10N100LD N-Channel Enhancement Mode Power MOSFET

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Mfr.:

Rectron

Description:

MOSFETs

FEATURED PRODUCTS

RECTRON