Power MOSFETs

YAGEO XSemi Power MOSFETs use advanced processing techniques for low on-resistance, efficiency, and cost-effectiveness. YAGEO XSemi Power MOSFETs are available in different packages to fit application needs. Packages available for the device are widely used for commercial and industrial applications.

Results: 79
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
YAGEO XSemi MOSFETs P-CH -30V -9. 3A SO-8
5,975Expected 06/04/2027
Cut Tape
£0.428
£0.19
£0.167
£0.126
Reel
£0.094
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SO-8 P-Channel 1 Channel 30 V 9.3 A 20 mOhms 20 V 3 V 12 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -30V -4. 1A SOT-89
4,716On Order
Cut Tape
£0.338
£0.15
£0.118
Reel
£0.087
£0.072
£0.056
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT SOT-89-3 P-Channel 1 Channel 30 V 4.1 A 50 mOhms 20 V 3 V 6.5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -30V -3. 9A SOT-23S
2,955Expected 09/03/2027
Cut Tape
£0.263
£0.114
£0.10
£0.073
Reel
£0.051
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-23S-3 P-Channel 1 Channel 30 V 3.9 A 55 mOhms 20 V 3 V 6.5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs N-CH 600V 0.0 53A SOT-23
5,993Expected 03/03/2027
Cut Tape
£0.338
£0.149
£0.131
£0.098
Reel
£0.072
£0.062
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-23-3 N-Channel 1 Channel 600 V 53 mA 72 Ohms 20 V 2.6 V 2.3 nC - 55 C + 150 C 500 mW Enhancement Reel, Cut Tape, MouseReel