GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.

Results: 11
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Technology
onsemi GaN FETs GaN FET, 700V, 75m, DPAK
Datasheet
2,440In Stock
Min.: 1
Mult.: 1
Max.: 250
: 250

SMD/SMT DPAK-3 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 105 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V, 75m, 8x8
Datasheet
2,463In Stock
Min.: 1
Mult.: 1
Max.: 246
: 250

SMD/SMT DFN-9 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 111 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V,101m, 8x8
Datasheet
2,472In Stock
Min.: 1
Mult.: 1
Max.: 248
: 250

SMD/SMT DFN-9 N-Channel 1 Channel 700 V 16 A 130 mOhms - 6 V, + 7 V 2.5 V 2.65 nC - 55 C + 150 C 84 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V, 132m, 8x8
Datasheet
2,500In Stock
Min.: 1
Mult.: 1
Max.: 250
: 250

SMD/SMT DFN-9 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 69 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V, 132m, DPAK
Datasheet
2,488In Stock
Min.: 1
Mult.: 1
Max.: 249
: 250

SMD/SMT PDSO-E3 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 64 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V, 35MR LGAN TOLL
Datasheet
2,400Expected 26/10/2026
Min.: 1
Mult.: 1
: 1,200

SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 21 nC - 55 C + 150 C 367 W Enhancement GaN
onsemi GaN FETs 650V, 35MR LGAN TOLT
Datasheet
2,400Expected 09/04/2027
Min.: 1
Mult.: 1
: 1,200

SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 16 nC - 55 C + 150 C 462 W Enhancement GaN
onsemi GaN FETs 650V, 50MR LGAN TOLL
Datasheet
2,400Expected 26/10/2026
Min.: 1
Mult.: 1
: 1,200

SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.6 nC - 55 C + 150 C 250 W Enhancement GaN
onsemi GaN FETs 650V, 50MR LGAN TOLT
Datasheet
2,400Expected 26/10/2026
Min.: 1
Mult.: 1
: 1,200

SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.9 nC - 55 C + 150 C 312 W Enhancement GaN
onsemi GaN FETs GaNEXUS FET, 100V, 2.7m, 3.3x3.3 Dual Cool
Datasheet
2,500Expected 30/10/2026
Min.: 1
Mult.: 1
Max.: 250
: 2,500

SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 183 A 2.7 mOhms - 4 V to 6 V 2.1 V 7.3 nC - 40 C + 150 C 250 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaNEXUS FET, 100V, 3.8m, 3.3x3.3 Dual Cool
Datasheet
2,500Expected 27/11/2026
Min.: 1
Mult.: 1
Max.: 250
: 2,500

SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 146 A 3.8 mOhms - 4 V to 6 V 5.2 nC - 40 C + 150 C 208 W Enhancement GaNEXUS GaN