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SiC MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
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1:
£16.86
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736In Stock
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NRND
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Mouser Part No
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
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SiC MOSFETs SIC_DISCRETE
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736In Stock
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£16.86
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£13.54
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£12.48
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£11.33
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Quote
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Quote
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
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1:
£4.41
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6,783In Stock
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4,000Expected 07/01/2027
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Mouser Part No
726-IMBF170R1K0M1XTM
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Infineon Technologies
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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6,783In Stock
4,000Expected 07/01/2027
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£4.41
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£2.78
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£2.08
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£1.77
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£1.65
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£1.58
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Min.: 1
Mult.: 1
:
1,000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
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5.2 A
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1 Ohms
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- 10 V, + 20 V
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4.5 V
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5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
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1:
£6.12
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285In Stock
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NRND
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Mouser Part No
726-IMW120R140M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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285In Stock
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£6.12
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£4.00
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£3.28
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£2.87
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£2.72
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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19 A
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182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
£12.18
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1,221In Stock
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NRND
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Mouser Part No
726-IMW65R027M1HXKSA
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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1,221In Stock
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£12.18
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£9.28
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£7.73
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£6.89
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£6.51
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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650 V
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47 A
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34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
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189 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
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1:
£8.35
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42In Stock
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240Expected 24/08/2026
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NRND
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Mouser Part No
726-IMZA65R048M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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42In Stock
240Expected 24/08/2026
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£8.35
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£5.91
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£4.92
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£4.37
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£4.16
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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650 V
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39 A
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64 mOhms
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- 5 V, + 23 V
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5.7 V
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33 nC
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- 55 C
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+ 150 C
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125 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
£13.83
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2,160On Order
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NRND
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Mouser Part No
726-IMZ120R030M1HXKS
NRND
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Infineon Technologies
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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2,160On Order
Factory Lead Time:
52 Weeks
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£13.83
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£9.14
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£7.90
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£7.68
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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1.2 kV
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56 A
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40 mOhms
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- 7 V, + 23 V
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5.7 V
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63 nC
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- 55 C
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+ 150 C
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227 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
£7.12
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Non-Stocked Lead-Time 52 Weeks
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NRND
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Mouser Part No
726-IMZA65R072M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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Non-Stocked Lead-Time 52 Weeks
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£7.12
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£5.01
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£3.68
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£3.23
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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650 V
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28 A
|
94 mOhms
|
- 5 V, + 23 V
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5.7 V
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22 nC
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- 55 C
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+ 150 C
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96 W
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Enhancement
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CoolSiC
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United Kingdom