5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications. 

Results: 2
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Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package/Case
Packaging
MACOM RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz
Datasheet
90In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 250

N-Channel Si 65 V 80 mOhms 2.62 GHz to 2.69 GHz 13.5 dB 400 W + 225 C Screw Mount HB2SOF-8-1 Reel, Cut Tape, MouseReel
MACOM RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz
Datasheet
Non-Stocked
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 65 V 80 mOhms 2.62 GHz to 2.69 GHz 13.5 dB 400 W + 225 C Screw Mount HB2SOF-8-1 Reel