MRFX Series 65V LDMOS Transistors

NXP Semiconductors MRFX Series 65V LDMOS Transistors offer high RF output power, superior ruggedness, and thermal performance. These transistors feature high power density, lower current losses, high efficiency, easier matching to 50Ω, wide safety margin, and negligible magnetic radiation. The higher power density, low current, and high safety margin enable highly reliable and more integrated industry 4.0 systems with better energy management.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Operating Frequency Gain Output Power Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V 5In Stock
Min.: 1
Mult.: 1
Reel: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 24.4 dB 1.8 kW - 40 C + 150 C SMD/SMT OM-1230G-4 Reel, Cut Tape
NXP Semiconductors RF MOSFET Transistors 65V LDMOS 1800W CW 1.8-400MHz 21In Stock
Min.: 1
Mult.: 1
Reel: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 24.4 dB 1.8 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape