BGB 741L7ESD E6327

Infineon Technologies
726-BGB741L7ESDE63
BGB 741L7ESD E6327

Mfr.:

Description:
RF Amplifier RF BIP TRANSISTORS

ECAD Model:
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In Stock: 14,534

Stock:
14,534
Can Dispatch Immediately
On Order:
15,000
Expected 16/04/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 7500)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£0.751 £0.75
£0.643 £6.43
£0.601 £15.03
£0.555 £55.50
£0.526 £131.50
£0.499 £249.50
£0.479 £479.00
£0.478 £1,912.00
Full Reel (Order in multiples of 7500)
£0.416 £3,120.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Amplifier
RoHS:  
50 MHz to 3.5 GHz
1.8 V to 4 V
10 mA
20 dB
1.05 dB
Low Noise Amplifiers
SMD/SMT
TSLP-7-1
SiGe
- 6.5 dBm
1 dBm
- 55 C
+ 150 C
BGB741L7
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Number of Channels: 1 Channel
Pd - Power Dissipation: 120 mW
Product Type: RF Amplifier
Factory Pack Quantity: 7500
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 150 MHz
Part # Aliases: SP000442946 BGB741L7ESDE6327XT BGB741L7ESDE6327XTSA1
Unit Weight: 2 mg
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CNHTS:
8542339000
CAHTS:
8541290000
USHTS:
8542330001
JPHTS:
8541290100
KRHTS:
8532331000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.