HiPerFET and MOSFET Power Devices

IXYS HiPerFET and MOSFET Power Devices are available in the SMPD package, which is much lighter (typically by 50%) than comparable conventional power modules. This enables the designer to create lower-weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, which saves PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances. This benefit also increases the life expectancy and reliability of the devices.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Series Packaging
IXYS MOSFET Modules 24SMPD N-CH 75V 500A 1In Stock
1,120Expected 24/06/2026
Min.: 1
Mult.: 1

Si SMD/SMT SMPD-24 N-Channel 1 Channel 75 V 500 A 1.6 mOhms - 20 V, + 20 V 2.5 V - 55 C + 175 C 830 W HiPerFET Tube
IXYS MMIX1F210N30P3
IXYS MOSFET Modules SMPD 300V 108A N-CH POLAR3 260In Stock
Min.: 1
Mult.: 1

Si SMD/SMT N-Channel 300 V 108 A 16 mOhms - 20 V, + 20 V 2.5 V - 55 C + 150 C 520 W HiPerFET Tube
IXYS MMIX1T660N04T4
IXYS MOSFET Modules Disc MSFT SMPD Pkg-HiPerFETMSFT SMPD-B Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT N-Channel 40 V 660 A 850 uOhms - 15 V, + 15 V 2 V - 55 C + 175 C 830 W HiPerFET Tube
IXYS MMIX2F60N50P3
IXYS MOSFET Modules SMPD 500V 30A N-CH POLAR3 Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT N-Channel 500 V 30 A 120 mOhms - 30 V, + 30 V 3 V - 55 C + 150 C 320 W HiPerFET Tube