STMicroelectronics IGBTs

Results: 205
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
STMicroelectronics IGBTs Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 300

Si TO-3PF Through Hole Single 600 V 1.8 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40V60DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long lead
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 166 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 lo
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss in a TO-247 long leads
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 600

Si - 20 V, 20 V STGWA30M65DF2 Tube
STMicroelectronics IGBTs 1250V 25A trench gte field-stop IGBT
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 300

Si TO-3P-3 Through Hole Single 1.25 kV 2.65 V - 20 V, 20 V 60 A 375 W - 55 C + 175 C STGWT28IH125DF Tube