It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MSC50DC120HJ

Name: Microchip MSC50DC120HJ
Brand: Microchip Technology
SKU: 494-MSC50DC120HJ
Price: 52.01 GBP
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

494-MSC50DC120HJ

Mfr. No:

MSC50DC120HJ

Mfr.:

Microchip Technology

Description:

Diode Modules PM-DIODE-SIC-SBD-SOT227

View in Development Tools Selector

Datasheet:

MSC50DC120HJ Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Microchip Technology MSC50DC120HJ

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

This Product Ships FREE

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£52.01	£520.10

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Diode Modules
RoHS:
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Vr - Reverse Voltage:	1.2 kV
Configuration:	Full Bridge
Vf - Forward Voltage:	1.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	Microchip Technology
Product:	SiC Schottky Diode Modules
Product Type:	Diode Modules
Factory Pack Quantity:	1
Subcategory:	Discrete and Power Modules
Technology:	SiC

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MSC50DC120HJ Datasheet (PDF)

DTS

View in Development Tools Selector

PCN

This functionality requires JavaScript to be enabled.

USHTS:: 8541590080
ECCN:: EAR99

Silicon Carbide (SiC) Power Modules

Microchip Technology Silicon Carbide (SiC) Power Modules combine a formidable array of technologies into a single package optimized for reliability, efficiency, space-saving, and reduced assembly time. The readily available standard module product line from Microchip Technology spans a wide selection of circuit topologies, semiconductors including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM®).

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.