+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (London) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IRFB4620PBFXKMA1

Name: Infineon IRFB4620PBFXKMA1
Brand: Infineon Technologies
SKU: 726-IRFB4620PBFXKMA1
Price: 0.7 GBP
Availability: OutOfStock

Mouser No:

726-IRFB4620PBFXKMA1

Mfr. No:

IRFB4620PBFXKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IR FET >60-400V

Datasheet:

IRFB4620PBFXKMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IRFB4620PBFXKMA1

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 19 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1000 Multiples: 1000

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

This Product Ships FREE

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.70	£700.00
	£0.665	£1,330.00
	£0.643	£3,215.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	72.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	144 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14.8 ns
Forward Transconductance - Min:	37
Product Type:	MOSFETs
Rise Time:	22.4 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25.4 ns
Typical Turn-On Delay Time:	13.4 ns
Part # Aliases:	IRFB4620PBFXKMA1 SP005745529

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IRFB4620PBFXKMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
ECCN:: EAR99

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.