SiC C3M MOSFETs

Wolfspeed SiC C3M MOSFETs enable higher switching frequencies and reduce inductor, capacitor, filter, and transformer component sizes. The Wolfspeed SiC C3M MOSFETs have higher system efficiency and reduced cooling requirements. The MOSFETs also increase power density and system switching frequency.

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Wolfspeed SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET
Datasheet
1,613In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 100 A 28.8 mOhms - 4 V, + 15 V 1.8 V 160 nC - 40 C + 175 C 469 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
Datasheet
342In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 63 A 32 mOhms - 4 V, + 15 V 3.6 V 114 nC - 40 C + 175 C 283 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 60 mohm, 650V, TO-247-4, Industrial
Datasheet
419In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 37 A 60 mOhms - 4 V, + 15 V 3.6 V 46 nC - 40 C + 175 C 150 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
Datasheet
894On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 63 A 32 mOhms - 4 V, + 15 V 3.6 V 118 nC - 40 C + 175 C 283 W Enhancement