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Newest Discrete Semiconductors

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Types of Discrete Semiconductors

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Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06/22/2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Diodes Incorporated DTHP60B07PT 60A Hyper-Fast Planar Rectifiers

03/13/2026

- Features a 650V reverse voltage, low forward voltage drop, and ultra-fast reverse recovery time.

Diodes Incorporated 5.0SMCJ1xCA 5000W Transient Voltage Suppressor

10/31/2025

- High-power TVS diode designed to protect sensitive electronic circuits from voltage spikes.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10/31/2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10/31/2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

10/21/2025

- Features superior switching performance, ideal for high-efficiency power-management applications.

Diodes Incorporated DTH1006P5 Glass Passivated Fast Recovery Rectifier

10/13/2025

- A 600V peak repetitive reverse voltage (VRRM) rectifier in a thermally efficient PowerDI®5 package.

Diodes Incorporated DXTP80x PNP Bipolar Transistors

09/18/2025

- PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Diodes Incorporated DXTN80x NPN Bipolar Transistors

09/17/2025

- Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.

Diodes Incorporated DXTN/P 78Q & 80Q Bipolar Transistors

07/24/2025

- Offers 30V, 60V, & 100V ratings, with exceptional conduction efficiency and thermal performance.

Diodes Incorporated TT8M 8A Glass Pasivated Bridge Rectifiers

05/01/2025

- Features a 1000V maximum repetitive peak reverse voltage and an 8A average rectified output current.

Diodes Incorporated DSCxA065LP Silicon Carbide Schottky Diodes

02/20/2025

- Features superior reverse leakage stability at high temperatures in a DFN8080 package.

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

11/14/2024

- Features a proprietary structure for achieving ultra-low VCE(SAT) performance.

Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

10/01/2024

- Provides low on-resistance in a thermally efficient small form factor package.

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

08/01/2024

- 20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.

Diodes Incorporated DT1042-02SRQ 2-Ch Low Capacitance TVS Diode Array

07/01/2024

- Designed to protect sensitive electronics from ESD damage.

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs

06/24/2024

- Designed to minimize the on-state resistance and maintain excellent switching performance.

Diodes Incorporated SxCMHQ AEC-Q101 Glass Passivated Rectifiers

06/04/2024

- Offers high-current capability and low forward voltage drop.

Diodes Incorporated DESD24VS2SOQ 24V CAN/LIN Bus Protector

06/01/2024

- An ESD and surge protection device packaged in a compact, surface-mount SOT23 package.

Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs

05/01/2024

- Offers low on-resistance & gate threshold voltage, while maintaining switching performance.

Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

05/01/2024

- Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.

Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

04/01/2024

- Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.

Diodes Incorporated US1NDFQ 1A Surface-Mount Ultra-Fast Rectifier

03/01/2024

- Offers ultra-fast recovery time for high efficiency in general rectification applications.

Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET

01/01/2024

- Offers low on-resistance and input capacitance, while maintaining superior switching performance.

Diodes Incorporated DESDxxVxS2UTQ Two-Ch Unidirectional TVS Diode

01/01/2024

- Designed to protect sensitive electronics from damage caused by ESD.

Viewing: 1 - 25 of 41

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IXYS DK010S3ARP 1000V 10A Rectifier

07/20/2026

- Features glass-passivated junctions for enhanced stability and is assembled in a DO-214AB package.

onsemi GaNEXUS™ GaN FETs

07/08/2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

Bourns CDDFN2 Surface Mount TVS Diodes

07/07/2026

- ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.

Semtech RCLAMP2891PQ TVS Diode

06/30/2026

- Ultra-low capacitance 1-line, 28V TVS diode, protects high‑speed signal lines from ESD and EOS.

Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode

06/29/2026

- Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.

Littelfuse TVS SPA Diode Arrays

06/26/2026

- TVS diode arrays for ESD, EFT, and surge protection across data and power interfaces.

Bourns CDSOD323-T24LC-Q Automotive-Grade TVS Diodes

06/26/2026

- Bidirectional automotive-grade TVS diodes in a compact SOD-323 package.

Bourns CDSOD323-TxxSC-Q TVS Diodes

06/25/2026

- Offer a selection of voltage options from 3V to 36V in a bidirectional configuration.

Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06/22/2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Vishay MXP075 MaxSiC® 750V N-Channel MOSFETs

06/19/2026

- Features a 750V drain-source voltage, a fast switching speed & a 3μs short-circuit withstand time.

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

06/18/2026

- Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.

Infineon Technologies EasyPACK™ S Modules

06/12/2026

- Efficient power conversion in a compact, easy-to-integrate package built for modern power designs.

Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs

05/27/2026

- Advanced N‑channel devices engineered for high-efficiency power switching.

Texas Instruments 2N7002L 6V N-channel MOSFETs

05/18/2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Bourns CDSOT23-SM712-Q Surface-Mount TVS Diode

05/12/2026

- Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.

Infineon Technologies CIPOS™ Prime Automotive CoolSiC™ Power Modules

05/06/2026

- Power Modules are designed for high performance in xEV applications.

Littelfuse AK-FL TVS Diodes

05/04/2026

- Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.

Littelfuse TP1KSMB-FL FlatSuppressX™ TVS Diodes

05/04/2026

- Designed specifically to protect sensitive electronic equipment from voltage transients.

Littelfuse TP5.0SMD-FL FlatSuppressX™ TVS Diodes

05/04/2026

- 5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.

Littelfuse QVx35xHx High-Temperature Alternistor TRIACs

04/24/2026

- Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.

Littelfuse SJx08x High-Temperature SCRs

04/24/2026

- Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.

RECOM Power ICs, Transformers, & Discrete Solutions

04/24/2026

- Features components ideal for energy, industrial, and medical applications.

Diotec Semiconductor BAS70-05W Schottky Diode

04/16/2026

- Designed for high‑speed switching and voltage clamping in space‑constrained applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04/14/2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04/10/2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

Viewing: 1 - 25 of 1075

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Types of Discrete Semiconductors

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