XPJ1R004PB,LXHQ

Toshiba
757-XPJ1R004PBLXHQ
XPJ1R004PB,LXHQ

Mfr.:

Description:
MOSFETs S-TOGL N-CH 40V 160A

Datasheet:
ECAD Model:
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In Stock: 2,440

Stock:
2,440 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£1.48 £1.48
£0.943 £9.43
£0.826 £82.60
£0.803 £401.50
£0.78 £780.00
Full Reel (Order in multiples of 1500)
£0.766 £1,149.00
£0.726 £2,178.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Reel
Cut Tape
Brand: Toshiba
Product Type: MOSFETs
Factory Pack Quantity: 1500
Subcategory: Transistors
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).

L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs

Toshiba L-TOGL and S-TOGL AEC-Q101 40V/80V/100V N-Channel MOSFETs deliver ultra-low on-resistance, a high drain current rating, and high heat dissipation. This is achieved by combining high heat dissipation packages [L-TOGL (large transistor outline gull-wing leads) and S-TOGL (small transistor outline gull-wing leads)] with the U-MOS IX-H and U-MOS X-H chip processes. Toshiba L-TOGL and S-TOGL MOSFETs also offer high current capability and high heat dissipation to help improve power density in a wide variety of automotive applications. The L-TOGL package is equivalent in size to the existing TO-220SM(W) package. However, XPQR3004PB greatly improves the current rating and significantly lowers the on-resistance to 0.23mΩ typical. L-TOGLs optimized package footprint also helps improve thermal characteristics when compared to the same-sized TO-220SM(W) package.

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