+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (London) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IMT40R011M2HXTMA1

Name: Infineon IMT40R011M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMT40R011M2HXTMA
Price: 11.38 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IMT40R011M2HXTMA

Mfr. No:

IMT40R011M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMT40R011M2HXTMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IMT40R011M2HXTMA1

In Stock: 996

Stock:: 996 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£11.38	£11.38
	£8.81	£88.10
	£8.15	£815.00
Full Reel (Order in multiples of 2000)
	£7.14	£14,280.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	144 A
Rds On - Drain-Source Resistance:	16.3 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	429 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9.3 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	18.3 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Type:	G2 MOSFET
Typical Turn-Off Delay Time:	29.8 ns
Typical Turn-On Delay Time:	15.8 ns
Part # Aliases:	IMT40R011M2H SP005915790

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IMT40R011M2HXTMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 400V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.